Product Summary
The IRL1004PBF is a HEXFET Power MOSFET.
Parametrics
Absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V: 130 A; (2)Continuous Drain Current, VGS @ 10V: 92 A; (3)Pulsed Drain Current: 520 A; (4)Power Dissipation: 200 W; (5)Linear Derating Factor: 1.3 W/℃; (6)Gate-to-Source Voltage: ± 16 V; (7)Single Pulse Avalanche Energy: 700 mJ; (8)Avalanche Current: 78 A; (9)Repetitive Avalanche Energy: 20 mJ; (10)Peak Diode Recovery dv/dt: 5.0 V/ns; (11)Operating Junction and Storage Temperature Range: -55 to + 175℃; (12)Soldering Temperature, for 10 seconds: 300 (1.6mm from case) ℃; (13)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).
Features
Features: (1)Logic-Level Gate Drive; (2)Advanced Process Technology; (3)Ultra Low On-Resistance; (4)Dynamic dv/dt Rating; (5)175℃ Operating Temperature; (6)Fast Switching; (7)Fully Avalanche Rated.
Diagrams
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![]() IRL1004PBF |
![]() International Rectifier |
![]() MOSFET MOSFT 130A 66.7nC 6.5mOhm LogLvAB |
![]() Data Sheet |
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![]() IRL1004 |
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![]() MOSFET N-CH 40V 130A TO-220AB |
![]() Data Sheet |
![]() Negotiable |
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![]() IRL1004L |
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![]() MOSFET N-CH 40V 130A TO-262 |
![]() Data Sheet |
![]() Negotiable |
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![]() IRL1004LPBF |
![]() International Rectifier |
![]() MOSFET MOSFT 40V 110A 6.5mOhm 66.7nC LogLv |
![]() Data Sheet |
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![]() |
![]() IRL1004PBF |
![]() International Rectifier |
![]() MOSFET MOSFT 130A 66.7nC 6.5mOhm LogLvAB |
![]() Data Sheet |
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![]() IRL1004S |
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![]() MOSFET N-CH 40V 130A D2PAK |
![]() Data Sheet |
![]() Negotiable |
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![]() IRL1004SPBF |
![]() International Rectifier |
![]() MOSFET |
![]() Data Sheet |
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